9166 Physics of Microelectronic Devices

Introduction: Semiconductor Physics and Transport Phenomena. Planar Technology of Microelectronic devices. Bipolar Devices: p-n junctions, Space-charge region, Ideal diode characteristic, Recombination currents, transient phenomena, solar cells. Strong electric fields and breakdown phenomena. Bipolar transistors: operating principle, static current-voltage characteristics, transient phenomena, equivalent circuits. Ohmic and rectifying contacts in semiconductors. Tunneling phenomenon. Metal-semiconductor contacts (Schottky). Current-voltage characteristics. MOS devices (metal-oxide-semiconductor). MOS capacitance: energy band bending, surface states, capacitance and conductance as a function of bias voltage and frequency. Techniques for characterizing surface states. MOS Transistors: Static and dynamic response, simulation, surface carrier mobility. High-field and small-dimension phenomena, Scaling theory: Device types [JFET, MESFET, C-MOS etc.]. Scaling theory. Device types. JFET – MESFET – C-MOS. Small-dimension systems: Quantum wells. Quantum wires and dots. Introduction to nano-electronic devices.
ECTS : 5
Language : el
Learning Outcomes : Upon successful completion of the course, the student will be able to: • Understand the design of the semiconductor energy band diagram both without and under the influence of an electric field. • Calculate the concentration of electrons and holes in intrinsic and extrinsic semiconductors, as well as the position of the Fermi level, and vice versa. • Relate the number and spatial distribution of minority carriers to the current flowing through a p-n diode. • Determine from the experimental current-voltage characteristic whether a real p-n diode behaves ideally or not. • Draw energy band diagrams at equilibrium and non-equilibrium conditions for the p-n junction, metal-semiconductor contact, and transistors (bipolar and MOSFET). • Explain the operating states of the bipolar transistor by correlating the distribution of minority carriers in the two diodes composing it and the current under various bias voltages. • Calculate the threshold voltage and the current of ideal and non-ideal MOSFET transistors depending on the bias voltages. • Be familiar with expected future directions in microelectronics technology.