- Crystal development: molten Si crystal development, moving zone technology, GaAs crystal development, characterization of materials, epitaxial growth, structure and defects of epitaxial growth systems.
- Thin film development: thermal oxidation, chemical vapor deposition of dielectric materials, chemical vapor deposition of poly-Si, atomic layer deposition, thermal evaporation, electron beam evaporation, sputtering.
- Lithography: optic lithography, wet lithography, dry lithography, new generation of lithography techniques.
- Semiconductor doping: basics of diffusion, diffusion process, ion implantation, structural disorder due to implantation and thermal annealing.
- Development of integrated circuits and devices: passive elements, bipolar technology, MOSFET technology, nanoelectronics.
- Packaging: Cross talk and technology to reduce it, wafer dicing, wire bonding, polymeric packaging, electronic material & device packaging, thick and hybrid film technology.
Laboratory: Simulation of microelectronic structures
- Teacher: Ευάγγελος Χριστοφόρου
ECTS : 3
Study Load : theory 2, lab 1
Language : el
Learning Outcomes : During the course students become acquainted with: (1) production and characterization technologies of substrates for integrated circuits, (2) thin film development on these substrates, (3) implantation and diffusion doping, (4) lithography and etching techniques, (5) microelectronics packaging technologies